CGD65A130S2-T13

CGD65A130S2-T13

Part number
CGD65A130S2-T13
Product Categories
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Describe
650V GAN HEMT, 130MOHM, DFN8X8.
Encapsulation
-
Package
Tape & Reel (TR)
ROHS status
Yes
Price
USD $2.6560
Data sheet
-
Quantity
RFQ
In stock: 23352
Smallest : 3500
Multiple : 1
Quantity
Unit price
Price
1
$5.0000
$5.0000
10
$4.2880
$42.8800
100
$3.5680
$356.8000
500
$3.1520
$1,576.0000
1000
$2.8400
$2,840.0000
3500
$2.6560
$9,296.0000
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Purchase and inquiry

Specification

Transport

Data sheet

ABLIC U.S.A. Inc. S-1132B33-I6T2U has similar specifications, properties, parameters and parts as ABLIC U.S.A. Inc. S-1132B33-I6T2U.

TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case16-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Supplier Device Package16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 12 V

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Mailing method


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Delivery time


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FedEx International, 5-7 business days.

The following are logistics times for some common countries.

transport

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